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赵小龙
日期:2022-01-23    点击数:    来源:
职称 副教授 系别 半导体核辐射探测及微波无源器件非线性效应
邮箱 zhaoxiaolong@xjtu.edu.cn

    姓名:赵小龙

    职称:副教授

    研究方向:半导体核辐射探测及微波无源器件非线性效应

    邮箱: zhaoxiaolong@xjtu.edu.cn

    个人主页:https://gr.xjtu.edu.cn/web/zhaoxiaolong



1、个人简介:

2018.10-至今:bat365正版唯一官网,电信学部bat365在线平台登录入口,助理研究员

2017.12-2018.08:西安华为技术有限公司,硬件工程师

2012.09-2017.09:bat365正版唯一官网,电子科学与技术专业,博士

2008.09-2012.07:bat365正版唯一官网,微电子学专业,本科

2、研究领域或方向:

宽禁带和超宽禁带半导体核辐射传感器和微探测系统;通信系统无源非线性干扰问题诊断方法和抑制技术。

3、正在或曾经承担的科研项目:

[1] ZnO X射线探测器关键问题研究,国家自然科学基金青年项目,2021.01-2023.12

[2]电连接方案项目, 企业横向课题,2021.09-2022.09

4、获奖情况及科研成果:

发表论文:

[1] Zhao X., Ye M., Cao Z., Huang D., Fan T., He Y.*, Cancellation method to improve signal to noise ratio of an electrodeless microwave biased ZnO single crystal x-ray detector, Review of Scientific Instruments, 2022, 93, 015006.

[2] Zhao X., Huang D., Li G., He Y.*, Peng W., Li G., High sensitivity X-ray detector based on a 25 μm-thick ZnO film, Sensors and Actuators A: Physical, 2022, 334, 113310.

[3] Zhao X., Huang D., He Y.*, Pan Z., Peng W., Li G., Characterization of an n-ZnO/p-Si/n-Si Heterojunction Bipolar Phototransistor for X-ray Detection, Solid State Electronics, 2022, 188, 108221.

[4] Guo S., Zhao X.*, He Y.*, Cai Y., Yang M., Guo X., Fu X., Zhang L., Visible-Blind Photodetector Based on p-i-n Junction 4H-SiC Vertical Nanocone Array, IEEE Transactions on Electron Devices, 2021, 68(12), 6208-6215.

[5] Guo S., Zhao X.*, He Y.*, Pan Z., Yang M., Cai Y., Fu X., Zhang L., Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor, IEEE Transactions on Electron Devices, 2021, 68(5), 2342-2346.

[6] Zhao X., Chen L., Pen W., Li G., Guo S., He Y.*, Ouyang X., Study of a Neutron-resistant p+-Si/n-ZnO Photodetector with Avalanching Gain, Sensors and Actuators A: Physical, 2021, 318, 112375.

[7] Zhang S., Zhao X., Cao Z., Zhang K., Gao F., He Y.*, Experimental Study of Electrical Contact Nonlinearity and its Passive Intermodulation Effect. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2020, 10(3), 424-434.

[8] 赵小龙, 叶鸣, 张松昌, 曹智, 张可越, 张安学, 贺永宁*. 基于介电非线性机制的微带电路无源互调效应研究, 电子学报,202048(12)2289-2296.

[9] Zhao X., He Y.*, Chen L., Neutron-Irradiation Effects on ZnO Nanostructure, IEEE International Conference on Electron Devices and Solid-State Circuits, 2019, Xi’an, China.

[10] Zhang S., Zhao X., Ye M., He Y.*, Theoretical and Experimental Study on Electrical Contact Resistance of Metal Bolt Joints. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2019, 9(7), 1301-1309.

[11] Zhou L., Huang Z., Zhao X., He Y., Chen L., Xu M., Zhao K. Zhang S., Ouyang X., A high resistivity ZnO film based photoconductive X-ray detector. IEEE Photonics Technology Letters, 2019, 31(5), 365-368.

[12] Chen K., Zhao X., Mesli A., He Y., Dan Y.*, Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements. ACS nano, 2018, 12(4), 3436-3441.

[13] 李军, 赵小龙, 高凡, 张松昌, 贺永宁*, 崔万照, 徐卓, 利用电热耦合效应的金属单点接触结构无源互调研究, bat365正版唯一官网学报, 2018, 52(9), 76-81.

[14] Zhao X., He Y.*, Peng W., Chen L. Electrical and optical characterization of AgxO films deposited by RF reactive magnetron sputtering. Thin Solid Films, 2017, 636, 333-338.

[15] Zhao X., He Y.*, Ye M., Fan G., Peng W., Li Y., Bai C., Cui W., Analytic Passive Intermodulation Model for Flange Connection Based on Metallic Contact Nonlinearity Approximation. IEEE Transactions on Microwave Theory and Techniques, 2017, 65(7), 2279-2287.

[16] Zhao X., Chen L., He Y.*, Liu J., Peng W., Huang Z., Qi X., Pan Z., Zhang W., Zhang Z., Ouyang X., Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor. Applied Physics Letters, 2016, 108(17), 171103.

[17] Pan Z., Zhao X., Peng W., Qi X., He Y.*, A ZnO-Based Programmable UV Detection Integrated Circuit Unit, IEEE Sensors Journal, 2016, 16 (22), 7919-7923.

[18] Zhao X., He Y.*, Chen L., Liu J., Ouyang X., X-ray detectors based on p+-Si/n-ZnO abrupt heterojunctions, Proceeding of IEEE Sensors 2015, Busan, South Korea.

[19] He Y.*, Zhao X., Wang X., Chen L., Peng W., Ouyang X., Characterizations of an X-ray detector based on a Zn2SiO4 film, Sensors and Actuators A, 2015, 236:98-103.

[20] 赵小龙, 康雪, 陈亮, 张忠兵, 刘金良, 欧阳晓平, 彭文博, 贺永宁*. ZnO半导体电导型X射线探测器件研究, 物理学报, 2014, 63(9), 098502.

发明专利:

[1] 郭书文, 赵小龙, 贺永宁, 杨明超, 蔡亚辉, 张亮亮. 一种快速可控低成本制备大面积SiC纳米柱阵列的方法, 发明专利, 申请号2020110915017, 2020.10.13.

[2] 赵小龙, 贺永宁. 一种用于核辐射粒子探测的异质结晶体管探测器及其制备方法, 发明专利, 申请号202010238240.0, 2020.03.31.

[3] 赵小龙, 贺永宁, 胡杨波, 叶鸣, 曹智, 一种用于射频频段电接触元件的接触阻抗测量系统及方法, 发明专利, 专利号ZL201911012542.X.

[4] 贺永宁, 赵小龙, 潘子健, 梁志虎. 基于ZnO半导体的数字化X射线影像探测器及其制备方法, 专利号ZL201610201113.7, 2016.06.15.

[5] 贺永宁, 陈亮, 赵小龙, 刘晗, 欧阳晓平. 基于高阻ZnO单晶的光电导型X射线探测器及其制备方法, 专利号ZL201410014550.9, 2016.06.08.

5、指导研究生和本科生情况:

指导本科毕设1

6、联系方式:

邮箱:zhaoxiaolong@xjtu.edu.cn

电话:029-82668688




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